FGH50N6S2D, БТИЗ транзистор, 75 А, 2.7 В, 463 Вт, 600 В, TO-247, 3 вывод(-ов)
- Производитель
- ON Semiconductor
The FGH50N6S2D is a 600V N-channel IGBT with anti-parallel stealth diode. The SMPS II series is a combination of the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). This LGC device shortens delay times and reduce the power requirement of the gate drive. This device is ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for power factor correction (PFC) circuits, full bridge topologies, half bridge topologies, push-pull circuits, uninterruptible power supplies and zero voltage and zero current switching circuits. This product is general usage and suitable for many different applications.
• 100kHz Operation at 390V, 40A
• 200kHZ Operation at 390V, 25A
• 600V Switching SOA capability
• 90ns Fall time
• UIS Rated
Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные
Технические параметры
| Максимальная Рабочая Температура | 150 C |
| Количество Выводов | 3вывод(-ов) |
| Напряжение Коллектор-Эмиттер | 600в |
| Стиль Корпуса Транзистора | to-247 |
| Рассеиваемая Мощность | 463Вт |
| DC Ток Коллектора | 75А |
| Напряжение Насыщения Коллектор-Эмиттер Vce(on) | 2.7В |
| Вес, г | 13.53 |
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