IKP15N60TXKSA1, БТИЗ транзистор, универсальный, 30 А, 2.05 В, 130 Вт, 600 В, TO-220, 3 вывод(-ов)
- Производитель
- Infineon Technologies
The IKP15N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
• Very soft, fast recovery anti-parallel emitter controlled HE diode
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency - Low conduction and switching losses
• High device reliability
• 5µs Short-circuit withstand time
• Green product
• Halogen-free
Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные
Технические параметры
Максимальная Рабочая Температура | 175 C |
Количество Выводов | 3вывод(-ов) |
Напряжение Коллектор-Эмиттер | 600в |
Стиль Корпуса Транзистора | to-220 |
Рассеиваемая Мощность | 130Вт |
DC Ток Коллектора | 30а |
Напряжение Насыщения Коллектор-Эмиттер Vce(on) | 2.05В |
Вес, г | 1.8 |
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