IGCM10F60GAXKMA1, 3х фазный IGBT модуль, 600В, 10А [DIP 36x21]

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IGCM10F60GAXKMA1, 3х фазный IGBT модуль, 600В, 10А [DIP 36x21]

IGCM10F60GAXKMA1, 3х фазный IGBT модуль, 600В, 10А [DIP 36x21]

картинка IGCM10F60GAXKMA1, 3х фазный IGBT модуль, 600В, 10А [DIP 36x21]
1 020 руб.
Производитель
Infineon Technologies
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Полное описание

The IGCM10F60GAXKMA1 from Infineon is a CIPOS™ Control Integrated POwer System dual in-line intelligent power module (3? -bridge 600V/10A). The CIPOS™ mini transfer moulded intelligent power module achieves cost efficiency and is designed specifically for home appliance and low power industrial application. The CIPOS™ module offers chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control 3 phase AC motors and permanent magnet motors in variable speed drives for applications like an air conditioning, dish washers, refrigerator, washing machine, fans and low power motor drive. The package concept is specially adapted to power applications which need good thermal conduction and electrical isolation but also EMI save control and overload protection. The reverse conducting IGBTs are combined with an optimized SOI gate driver for excellent electrical performance.

• Fully isolated dual in-line moulded module, UL1577 approved, undervoltage lockout at all channels
• Rugged SOI gate driver technology with stability against transient and negative voltage
• Allowable negative VS potential up to -11V for signal transmission at VBS = 15V
• Integrated bootstrap functionality, overcurrent shutdown, temperature monitor
• 400V DC link supply voltage of P-N, 13.5V to 18.5V high side floating supply voltage (VB vs VS)
• Low side emitter pins accessible for all phase current monitoring (open emitter)
• All of 6 switches turn off during protection, 10A output current (TC = 25°C, TJ <, 150°C)
• 1mA collector-emitter leakage current (VCE = 600V), 370µA quiescent VDD supply current (VDD only)
• 1.6V collector-emitter saturation voltage, 1.75V emitter-collector forward voltage (IF=6A, TJ=25°C)
• 600V repetitive peak reverse voltage, 600V maximum blocking voltage at IC = 250µA



Технические параметры

СерияCIPOS
ТипIGBT
Количество фаз3
Непрерывный коллекторный ток при 25C, А10
Напряжение коллектор-эмиттер (Vces), В600
Напряжение изоляции, Vrms2000
Корпусdip 36x21
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