The MB85R4002ANC-GE1 is a 4MB Ferroelectric Random Access Memory (FRAM) chip consisting of 262144 words x 16-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 10?? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E?PROM. The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

• Data retention - 10 years
• Operating power supply voltage - 3 to 3.6V
• Low power consumption

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

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