The MB85RC64APNF-G-JNE1 is a 64kB I?C Ferroelectric Random Access Memory (FRAM) chip in a configuration of 8192 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10?? cycles, significantly outperforming flash memory and E?PROM in the number. The MB85RC64A does not need a polling sequence after writing to the memory such as the case of Flash memory or E?PROM.

• Operating frequency - 1MHz maximum
• 2-wire serial interface
• Operating power supply voltage - 2.7 to 3.6V
• Low power consumption
• Data retention - 10 years

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

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