SST25VF010A-33-4I-SAE, Флеш память, Последовательная NOR, 1 Мбит, 128К x 8бит, Последовательный SPI, SOIC, 8 вывод(-ов)

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SST25VF010A-33-4I-SAE, Флеш память, Последовательная NOR, 1 Мбит, 128К x 8бит, Последовательный SPI, SOIC, 8 вывод(-ов)

SST25VF010A-33-4I-SAE, Флеш память, Последовательная NOR, 1 Мбит, 128К x 8бит, Последовательный SPI, SOIC, 8 вывод(-ов)

картинка SST25VF010A-33-4I-SAE, Флеш память, Последовательная NOR, 1 Мбит, 128К x 8бит, Последовательный SPI, SOIC, 8 вывод(-ов)
54 руб.
Производитель
Microchip
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Полное описание

The SST25VF010A-33-4I-SAE is a 1Mbit SPI Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. The SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. This device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. This device operates with a single 2.7 to 3.6V power supply.

• Serial interface architecture
• Superior reliability
• Low power consumption
• Flexible erase capability
• Fast erase and byte-program
• Auto address increment (AAI) program
• End-of-write detection
• Suspends a serial sequence to memory without deselecting device
• Enables/disables lock-down function of status register
• 100 Years data retention

Полупроводники - Микросхемы\Память\FLASH



Технические параметры

Минимальная Рабочая Температура-40 C
Максимальная Рабочая Температура85 C
Максимальное Напряжение Питания3.6В
Минимальное Напряжение Питания2.7В
Количество Выводов8вывод(-ов)
Тип Интерфейса ИСПоследовательный SPI
Тактовая Частота33МГц
Время Доступа12нс
Стиль Корпуса Микросхемы ПамятиSOIC
Размер Памяти1Мбит
Конфигурация Флэш-памяти128К x 8бит
Линейка Продукции3V Serial NOR Flash Memories
Тип Flash ПамятиПоследовательная NOR
EU RoHSCompliant
ECCN (US)3A991.b.1.a
Part StatusActive
HTS8542.32.00.71
Cell TypeNOR
Chip Density (bit)1M
ArchitectureSectored
Boot BlockNo
Block OrganizationSymmetrical
Address Bus Width (bit)1
Sector Size4Kbyte x 32
Number of Bits/Word (bit)8
Number of Words128K
ProgrammabilityYes
Timing TypeSynchronous
Max. Access Time (ns)12
Maximum Erase Time (s)0.1/Chip
Maximum Programming Time (ms)0.02/Byte
Interface TypeSerial-SPI
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Maximum Operating Supply Voltage (V)3.6
Programming Voltage (V)2.7 to 3.6
Operating Current (mA)10
Program Current (mA)30
Minimum Operating Temperature (C)-40
Maximum Operating Temperature (C)85
Supplier Temperature GradeIndustrial
Command CompatibleYes
ECC SupportNo
Erase Suspend/Resume Modes SupportNo
Simultaneous Read/Write SupportNo
Support of Common Flash InterfaceNo
Support of Page ModeNo
Minimum Endurance (Cycles)10000
PackagingTube
Supplier PackageSOIC
Standard Package NameSOP
Pin Count8
MountingSurface Mount
Package Height1.5(Max)
Package Length5(Max)
Package Width4(Max)
PCB changed8
Lead ShapeGull-wing
Вес, г0.1
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