The DG303BDJ-E3 is a single-pole double-throw monolithic CMOS Switch for precision applications where low leakage switching combined with low power consumption are required. Designed on the CMOS process, this switch is latch-up proof and is designed to block up to 30V peak-to-peak when OFF. In the ON condition the switch conducts equally well in both directions and minimize error conditions with their low ON-resistance. This switch is ideal for battery powered applications without sacrificing switching speed. Designed for break-before-make switching action, this device is CMOS and quasi TTL compatible.

• An epitaxial layer prevents latch-up
• Single supply operation
• Full rail-to-rail analogue signal range
• Low signal error
• Low power dissipation

Полупроводники - Микросхемы\Коммутаторы, Мультиплексоры и Демультиплексоры\Аналоговые Переключатели

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