The MBR150G is an axial-lead Schottky Rectifier with an epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

• Low-reverse current
• Low stored charge, majority carrier conduction
• Low-power loss/high-efficiency
• Highly stable oxide-passivated junction
• All external surfaces corrosion-resistant

Полупроводники - Дискретные\Диоды\Диоды Шоттки

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