2N7000-D26Z, МОП-транзистор, N Канал, 200 мА, 60 В, 5 Ом, 10 В, 2.1 В
- Производитель
- ON Semiconductor
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild's proprietary high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
• High density cell design for extremely low RDS (ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• 60V Drain gate voltage (VDGR)
• ±20V Continuous gate source voltage (VGSS)
• 312.5°C/W Thermal resistance, junction to ambient
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы
Технические параметры
| Максимальная Рабочая Температура | 150 C |
| Количество Выводов | 3вывод(-ов) |
| Стиль Корпуса Транзистора | to-92 |
| Рассеиваемая Мощность | 400мВт |
| Полярность Транзистора | N Канал |
| Напряжение Истока-стока Vds | 60В |
| Непрерывный Ток Стока | 200ма |
| Сопротивление во Включенном Состоянии Rds(on) | 5Ом |
| Напряжение Измерения Rds(on) | 10В |
| Пороговое Напряжение Vgs | 2.1В |
| Maximum Operating Temperature | +150 C |
| Number of Elements per Chip | 1 |
| Length | 5.2mm |
| Transistor Configuration | Single |
| Brand | ON Semiconductor |
| Maximum Continuous Drain Current | 200 mA |
| Package Type | TO-92 |
| Maximum Power Dissipation | 400 mW |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -55 C |
| Width | 4.19mm |
| Minimum Gate Threshold Voltage | 0.8V |
| Height | 5.33mm |
| Maximum Drain Source Resistance | 9 ? |
| Maximum Drain Source Voltage | 60 V |
| Pin Count | 3 |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Gate Source Voltage | -40 V, +40 V |
| Вес, г | 0.515 |
- Полное описание
- Комментарии